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The effect of high density (- 105 A/cm 2) electric current pulses (- 100 I-ls duration) on the flow stress of polycrystalline Nb (99.96%) was investigated as a function of test temperature T (77-375K) and prior plastic strain rate E (1.7 x 10-5 - 8.4 x l0-4s- I ). silicon carbide fiber-silicon carbide matrix, and coated silicon carbide

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Crystalline silicon. Crystalline silicon (c-Si) is the crystalline forms of silicon, either multicrystalline silicon (multi-Si) consisting of small crystals, or monocrystalline silicon (mono-Si), a continuous crystal. New!!: Crystal and Crystalline silicon · See more » Crystallinity. Crystallinity refers to …

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2020-3-15 · Silicon carbide, SiC (carborundum) is a hard, high melting solid and a well known abrasive. By 2013 polycrystalline silicon production, used mostly in solar cells, is projected to reach 200,000 metric tons per year, while monocrystalline semiconductor silicon production (used in computer microchips) remains below 50,000 tons/year.[30

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The thermal coefficient of Young''s modulus, 1/E · δE/δT was measured to be −52.6 ± 3.45 ppm/K for silicon and −39.8 ± 5.99 ppm/K for 3C silicon carbide, agreeing well with theoretical

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"A silicon carbide array for electrocorticography and peripheral nerve recording". "Biofluid pretreatment using gradient insulator-based dielectrophoresis: separating cells from biomarkers". "Formation of Photo-Responsive Liquid Crystalline Emulsion by Using Microfluidics Device".

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Alfa Aesar

2020-1-31 · Alfa Aesar is a leading manufacturer and supplier of research chemicals, pure metals and materials for a wide span of appliions.

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Silica, Quartz, and Silie Materials Selection Guide

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Federal Register :: Implementation of the 2002 …

2003-3-5 · Equipment for producing polycrystalline silicon and materials controlled by 3C001; b.1.b. Equipment specially designed for purifying or processing III/V and II/VI semiconductor materials controlled by 3C001, 3C002, 3C003, or 3C004, except crystal pullers, for which see 3B991.b.1.c below;

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