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2018-12-31 · Effect of tungsten carbide addition on the tribological behavior of Astaloy 85Mo powder consolidated via spark Formation of a nanocrystalline recrystallized layer during microabrasive wear of a cobalt-chromium Effect of pH on wear and friction of silicon nitride sliding against alumina in water. Tribology International. v. 90, p. 356

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This pyrolizing step converts the impregnated resin content to 70% to 80% silicon carbide by weight enabling a permanent SiC bonding phase at temperatures as low as 650° C., thereby creating a self supporting structure within an operational temperature ranges of 650° C. and approximately 2000° C., allowing substantially self-supporting

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2013-10-18 · Silicon carbide is a semiconductor with predominantly covalent bonding and the surface states caused by the presence of carbon vacanSEMICONDUCTORS Vol. 41 No. 11 2007 cies. The height of the potential barrier at the metal–SiC interface depends heavily on the work function for electrons that leave the metal [299, 300].

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2018-8-13 · AR-RE-03 # 22 Heat transport in silicon carbide boarded by proton beams by Maher Soueidan. AR-RE-03 # 66 Sensitivity of HfO2 based RRAM devices to gamma irradiation by N Arun. AR-RE-03 # 91 Study of Radiation Effects in Electronics of a Hexapod Robotic Platform by Monia Kazemeini.

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2018-12-31 · Effect of tungsten carbide addition on the tribological behavior of Astaloy 85Mo powder consolidated via spark plasma sintering. MALTA, EDUARDO RIBEIRO; DE ARRUDA MARTINS, CLÓVIS. Formation of a nanocrystalline recrystallized layer during microabrasive wear of a cobalt-chromium based alloy (Co-30Cr-19Fe).

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Mater Sci and Eng B 46:278–286 44. Tairov YuM, Tsvetkov VF (1978) Investigation of Growth Processes of Ingots of Silicon Carbide Single Crystals. J Crystal Growth 43:209–212 45. Tairov YuM, Tsvetkov VF (1981) General Principles of Growing Large-size Single Crystals of Various Silicon Carbide Polytypes. J Crystal Growth 52:146–150 46.

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