a silicon carbide room-temperature single-photon source

Quantum light sources from semiconductor

Castelletto S, Johnson B C, Ivády V, et al. A silicon carbide room-temperature single-photon source. Nat Mater, 2014, 13, 151 [39] Widmann M, Lee S Y, Rendler T, et al. Coherent control of single spins in silicon carbide at room temperature. Nat Mater, 2015, 14, 164 [40]

Optically and electrically driven single-photon …

Optically and electrically driven single-photon emission in silicon carbide. Citations. Altmetric. Author Lohrmann, Alexander. Date 2016. Affiliation School of Physics. Metadata Show full item record. Document Type PhD thesis. Access Status This item is currently not available from this repository. URI

High efficiency four wave mixing and optical …

21.07.2020· Recently, silicon carbide has emerged as a promising platform for integrated nonlinear optics because of its large refractive index, Kerr nonlinearity, and wide bandgap. The large bandgap (larger than 2.4 eV 12 12. G. L. Harris, Properties of Silicon Carbide (INSPEC, the Institution of Electrical Engineers, London, UK, 1995).

Quantum Photonics Incorporating Color Centers in Silicon

Keywords: Nanophotonics, color centers, silicon carbide, diamond, single-photon source, spin-qubit. 1. Introduction As the growth of personal and super- computing is nearing the limits of the so-called Moore''s law [1], the paradigm where electronic information carriers …

Scalable Quantum Photonics with Single Color Centers in

3 Silicon carbide (SiC) has recently emerged as a host of color centers with exceptional brightness1 and long spin coherence times,2-5 much needed for the implementations of solid-state quantum bits and nanoscale magnetic sensors.6 In addition to a favorable set of physical properties, such as the wide band gap and high index of refraction, this material also benefits from the decades of

Carbon p Electron Ferromagnetism in Silicon …

Falk A. L. et al. Polytype control of spin qubits in silicon carbide. Nat. Commun. 4, 1819 (2013). [PMC free article] Castelletto S. et al. A silicon carbide room-temperature single-photon source. Nat. Mater. 13, 151–156 (2014). Kraus H. et al. Room-temperature quantum microwave emitters based on spin defects in silicon carbide. Nat.

Enhancement of ODMR Contrasts of Silicon …

We demonstrated the enhancement of the optically detected magnetic resonance (ODMR) contrast of negatively charged silicon vacancy (VSi-) in SiC by thermal treatment. To create high density VSi-, Proton Beam Writing (PBW) was conducted. After an annealing at 600 °C, ODMR contrast showed the highest value in the investigated temperature range.

Selective Purcell enhancement of two closely …

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center David O. Brachera,b,1, Xingyu Zhanga, and Evelyn L. Hua,1 aJohn A. Paulson School of Engineering and Applied Sciences, Harvard University, Caridge, MA 02138; and bDepartment of Physics, Harvard University, Caridge, MA 02138

Implantation and Optical Characterization of Color Centers

Silicon carbide is a material with superb electrical, optical and mechanical properties, which already nds appliions in electronics. Recently single uorescent centers with addressable spin states have been revealed. Additionally, a wide variety of photonic cavities with moderately high quality factors have been reported. We aimed to implant

Silicon Carbide Colour Centres for Scalable …

The colour centre in SiC nanopillars. Silicon carbide is a promising single-photon source and a good material out of which to make quantum bits (qubits) and nanoscale sensors based on individual “colour centres” (luminescing crystal defects that can emit individual photons). A team of researchers in the US, Germany, Korea, Sweden and Japan have now developed the first scalable array of

(ウメダ タカヒデ; Umeda, Takahide) | …

Silicon Carbide and Related Materials 2006, TRANS TECH PUBLIIONS LTD, pp.453-456, 2007-01 4H-SiC Si・a・mのスピンによる

Dmitry Yu. Fedyanin — MIPT

46. D.Yu. Fedyanin, I.A. Khramtsov, A.A. Vyshnevyy, Pushing the limits of electrically driven single-photon sources using color centers in silicon carbide // 34th International Conference on the Physics of Semiconductors, 29 July - 3 August 2018, Montpellier, France.

Bright nanowire single photon source based on …

The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV - ) color center in diamond is a possible candidate for such a single photon source. H …

Magnetic field and temperature sensing with …

Hain T. C. et al. Excitation and recoination dynamics of vacancy-related spin centers in silicon carbide. J. Appl. Phys. 115, 133508 (2014). Castelletto S. et al. A silicon carbide room-temperature single-photon source. Nature Mater. 13, 151–156 (2013). Hodges J. S. et al. Timekeeping with electron spin states in diamond. Phys. Rev.

Identifiion of divacancy and silicon vacancy …

Identifiion of divacancy and silicon vacancy qubits in 6H-SiC Published on Mar 18, 2019 in Applied Physics Letters 3.521 · DOI : 10.1063/1.5083031 Copy DOI

Isolated electron spins in silicon carbide with

Isolated electron spins in silicon carbide with millisecondcoherence times David J. Christle1,2, Abram L. Falk,1, Paolo Andrich1,2, Paul V. Klimov1,2, Jawad ul

Publiions - Single Quantum

Interference with a quantum dot single-photon source and a laser at telecom wavelength Applied Physics Letters 107, 131106 (2015) Isolated electron spins in silicon carbide with millisecond coherence times Nature Materials 14, 160 (2014) Quantum-dot spin–photon entanglement via frequency downconversion to telecom wavelength

Quantum-confined single photon emission at room

of SiC 16, 17 and the realization of single photon emission from bulk 4H SiC was demonstrated 7 underpinning its prime role in integrated multifunctional quantum devices. In this paper we report that silicon carbide tetrapods can be harnessed as room temperature, single photon emitters due to the quantum confinement effect at their structure.

Room-temperature single-photon emitters in …

Single-photon sources offer non-classical states of light and are a prerequisite for future quantum technologies .There are many types of single-photon emitters that include molecules , trapped atoms , quantum dots and defects in diamond .More recently point defects of wide-bandgap semiconductors, such as zinc oxide (ZnO) and silicon carbide , were shown to exhibit room-temperature single

Robust Multicolor Single Photon Emission from Point

technologies, including quantum communiions, computing and metrology.1, 2 Room temperature quantum emitters have, however, thus far been observed only in wide bandgap semiconductors such as diamond3 and silicon carbide,4 nanocrystal quantum dots,5-7 and most recently carbon nanotubes8. In previous reports we have

Investigation of the silicon vacancy color center for

linewidth less than 5 nm at room temperature based on a negatively charged single silicon vacancy color center. Thanks to the short photon duration of about 1.3-1.7 ns, by using high repetition pulsed excitation at 30 MHz, the triggered single photon source generates16.6 kcounts/s. And we discuss the

‪Brett C Johnson‬ - ‪Google Scholar‬

A silicon carbide room-temperature single-photon source. AGTO S. Castelletto, B. C. Johnson, V. Ivády, Single-photon emitting diode in silicon carbide. A Lohrmann, N Iwamoto, Z Bodrog, S Castelletto, T Ohshima, TJ Karle, Nature Communiions 6, 7783, 2015. 129: 2015: Chromium single-photon emitters in diamond fabried by ion

Erratum for the Report: “A room-temperature …

For the Report “[A room-temperature single-photon source based on strongly interacting Rydberg atoms][1],” recalibration of the vapor cell length revealed that the offset value differed from the value in the published paper. The details of this calibration method are described in ([ 1 ][2]). The measured values of all local cell lengths have changed by an amount of 390 nm.

University of Groningen Two-laser spectroscopy and

D. D. Room temperature coherent control of defect spin qubits in silicon carbide. Nature 479, 84{87 (2011). 11.Falk, A. et al. Polytype control of spin qubits in silicon carbide…

Bright Room‐Temperature Single‐Photon …

Bright Room‐Temperature Single‐Photon Emission from Defects in Gallium Nitride. Mark Holmes, Xinqiang Wang, Single photon source based on an InGaN quantum dot in a site-controlled optical horn Cristian Bonato, Sang-Yun Lee, Jörg Wrachtrup, Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum